sep-01-2003 1 BFS469L6 1 2 3 4 5 6 npn silicon rf twin transistor preliminary data ? low voltage/ low current applications ? ideal for vco modules and low noise amplifiers ? low noise figure: tr1: 1.1db at 1.8 ghz tr2: 1.5 db at 1.8 ghz ? world's smallest smd 6-pin leadless package ? built in 2 transitors (tr1: die as bfr460l3, tr2: die as bfr949l3) esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFS469L6 ad 1=c1 2=e1 3=c2 4=b2 5=e2 6=b1 tslp-6-1 maximum ratings parameter symbol value unit collector-emitter voltage tr1 tr2 v ceo 4.5 10 v collector-emitter voltage tr1 tr2 v ces 15 20 collector-base voltage tr1 tr2 v cbo 15 20 emitter-base voltage tr1 tr2 v ebo 1.5 1.5 collector current tr1 tr2 i c 50 70 ma
sep-01-2003 2 BFS469L6 maximum ratings parameter symbol value unit base current tr1 tr2 i b 5 7 ma total power dissipation 1) tr1, t s 104c tr2, t s 100c p tot 200 250 mw junction temperature tr1 tr2 t j 150 150 c ambient temperature tr1 tr2 t a -65 ... 150 -65 ... 150 storage temperature tr1 tr2 t stg -65 ... 150 -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) tr1 tr2 r thjs 230 200 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
sep-01-2003 3 BFS469L6 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage tr1, i c = 1 ma, i b = 0 tr2, i c = 1 ma, i b = 0 v (br)ceo 4.5 10 5 - - - v collector-emitter cutoff current tr1, v ce = 15 v , v be = 0 tr1, v ce = 20 v, v be = 0 i ces - - - - 10 10 a collector-base cutoff current tr1, v cb = 5 v, i e = 0 tr2, v cb = 10 v, i e = 0 i cbo - - - - 100 100 na emitter-base cutoff current tr1, v eb = 0,5 v, i c = 0 tr2, v eb = 1 v, i c = 0 i ebo - - - - 1 0.1 a dc current gain- tr1, i c = 20 ma, v ce = 3 v tr2, i c = 5 ma, v ce = 3 v h fe - 100 130 140 - 200 - electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency tr1, i c = 30 ma, v ce = 3 v, f = 1 ghz tr2, i c = 15 ma, v ce = 6 v, f = 1 ghz f t 16 tbd 22 9 - - ghz collector-base capacitance tr1, v cb = 3 v, f = 1 mhz, emitter grounded tr2, v cb = 10 v, f = 1 mhz, emitter grounded c cb - - 0.33 0.3 0.5 0.45 pf collector emitter capacitance tr1, v ce = 3 v, f = 1 mhz, base grounded tr1, v ce = 10 v, f = 1 mhz, base grounded c ce - - 0.17 0.17 - - emitter-base capacitance tr1, v eb = 0,5 v, f = 1 mhz, collector grounded tr2, v eb = 0,5 v, f = 1 mhz, collector grounded c eb - - 0.57 0.75 - -
sep-01-2003 4 BFS469L6 electrical characteristics at ta = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) noise figure tr1, i c =5ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt tr1, i c =5ma, v ce = 3 v, f = 3 ghz, z s = z sopt tr2, i c =3ma, v ce = 6 v, f = 1 ghz, z s = z sopt tr2, i c =3ma, v ce = 8 v, f = 1.8 ghz, z s = z sopt f - - - - 1.1 1.4 1 1.3 - - - - db power gain, maximum stable 1) tr1, i c = 20 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz tr2, i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 0.9 ghz tr2, i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - - - 14.5 20 14 - - - power gain, maximum available 1) tr1, i c = 20ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1,8 ghz g ma - 10 - transducer gain tr1, i c =20ma, v ce = 3 v, z s = z l =50 ?, f =1.8gh z tr1, i c =20ma, v ce = 3 v, z s = z l =50 ?, f =3ghz tr2, i c =15ma, v ce = 6 v, z s = z l =50 ?, f =1ghz tr2, i c =10ma, v ce = 8 v, z s = z l =50 ?, f =1.8gh z | s 21e | 2 - - - - 12.5 9 15,5 11 - - - - third order intercept point at output 2) tr1, v ce =3v, i c =20ma, z s = z l =50 ?, f =1.8ghz tr2, v ce =8v, i c =10ma, z s = z l =50 ?, f =1.8ghz ip 3 - - 28 24.5 - - dbm 1db compression point at output tr1, i c =20ma, v ce =3v, z s = z l =50 ?, f =1.8ghz tr1, i c =10ma, v ce =8v, z s = z l =50 ?, f =1.8ghz p -1db - - 12 6 - - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
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